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 CXK77B3611AGB -5/6
High Speed Bi-CMOS Synchronous Static RAM
Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Features * Fast cycle time (Cycle) (Frequency) CXK77B3611AGB-5 5ns 200MHz -6 6ns 167MHz * Inputs and outputs are GTL/HSTL compatible * Controlled Impedance Driver * Single 3.3V power supply: 3.3V0.15V * Byte-write possible * OE asynchronization * JTAG test circuit * Package 119TBGA * 4 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru mode (R-F mode) Register-Latch mode (R-L mode) Dual clock mode (D-C mode)
Preliminary
For the availability of this product, please contact the sales office.
119 pin BGA (Plastic)
Function 32768 word x 36bit High Speed Bi-CMOS Synchronous SRAM Structure Silicon gate Bi-CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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PE96812
CXK77B3611AGB
Block Diagram
15 A0 to 14
Input Reg.
2:1 Mux
Add. Dout 2:1 Mux
Write Store Reg.
32K x 36 Din Write pulse
Output latch
DQ
Reg.
Read Comp. S Reg.
W
Reg.
Self Time Write Logic
4 BW a to d Reg.
K/K C/C
Output Clock
M1 M2
Mode Control
G
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CXK77B3611AGB
Pin Configuration (Top View) 1 A B C D E F G H J K L M N P R T U VDDQ NC NC DQc DQc VDDQ DQc DQc VDDQ DQd DQd VDDQ DQd DQd NC NC VDDQ 2 A NC A DQc DQc DQc DQc DQc VDD DQd DQd DQd DQd DQd A NC TMS 3 A NC A VSS VSS VSS BWc VSS VREF VSS BWd VSS VSS VSS M1 A TDI 4 NC NC VDD ZQ S G C C VDD K K W A A VDD A TCK 5 A NC A VSS VSS VSS BWb VSS VREF VSS BWa VSS VSS VSS M2 A TDO 6 A NC A DQb DQb DQb DQb DQb VDD DQa DQa DQa DQa DQa A NC NC 7 VDDQ NC NC DQb DQb VDDQ DQb DQb VDDQ DQa DQa VDDQ DQa DQa NC ZZ VDDQ
Pin Description Symbol A DQx K K C C VREF Description Address Input Data I/O in byte (a to d) Positive Clock Negative Clock Symbol BWX S G ZZ Description Byte Write Enable (a to d) Chip Select Asyn Output Enable Sleep Mode Select JTAG Clock JTAG Mode Select JTAG Data In Symbol VDD VDDQ VSS M1, M2 ZQ NC Description +3.3V power supply Output power supply Ground Mode Select Output Impedance Control No Connect
Output Positive Clock() TCK Output Negative Clock() Input Reference TMS TDI
Write Enable JTAG Data Out TDO W () These pins should be tied to VDD or VSS except D-C mode.
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CXK77B3611AGB
Package Outline
Unit: mm
119 TERMINAL BGA (PLASTIC)
14.0 11.5 B
A
0.6 0.1 X C 3.19
U T R P N M L K J H G F E D C B A
7.62 1.27
0.84 19.5
0
C
x4 0.10
1.
1234567
3-
0.6 0.1 1.5
0.75 0.15
0.3 0.1
20.32
C AB
EPOXY RESIN COPPER-CLAD LAMINATE SOLDER 0.8g
22.0
0.35
1.27
C
SONY CODE EIAJ CODE JEDEC CODE
46 0. C
DETAIL X
BGA-119P-01
C 1. 5
0.15 C
BOARD MATERIAL
PACKAGE STRUCTURE
PACKAGE MATERIAL
TERMINAL MATERIAL PACKAGE WEIGHT
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